Delphin0606FDI productio est fixa rationi et soni x-radii planae tabulae detectoris secundum CMOS.CMOS sensoriis uno processu Pii crystalli ad fabricationem chippis utuntur.Recta amplificatio integra intra pixel cellulas ad sonum electronicum inferiorem, rationem ad tumultum altiorem, et quantum ad detectionem efficientiam altiorem (DQE) quam pii amorphoi (DQE) aptiores sunt, ideo CMOS sensoriis ad missiones imaginandi humilis dose aptissima sunt.Ex supra notis, delphin0606FDI detector late adhiberi potest in SMT industrialibus, electronicis, altilium lithium et inspectionem filum chipi compagis.
Electronic sonitus inferior
Superiore signo ut- strepitus ratio
Technology | |
Sensor | CMOS |
Scintillator | CSI |
Active Area | 60 x 53.5 mm |
Pixel Matrix | 1200 x 1056 |
Pixel Pix | 50 μm |
AD Conversionem | XIV bits |
Interface | |
Communication Interface | Fibra optica |
Patefacio Imperium | Sync in pulsum (vel Edge Level) / Ex pulsum sync (Edge vel Level) |
Opus Modus | Modus Software / HVG Sync Modus / FPD Sync Modus |
Frame Celeritate | 51fps (1x1) |
Sistema operatum | " |
Technica euismod | |
Resolution | 10.0 lp/mm |
Energy dolor | 40~160 KV |
Lag | 0.01% @1st frame |
Dynamic Range | ≥ 73dB |
Sensibilitas | 100 lsb/uGy |
SNR | 48 dB @(2000lsb) |
MTF | 90% @(1 lp/mm) |
82% @(2 lp/mm) | |
74% @(3 lp/mm) | |
DQE (2uGy) | 65% @(0 lp/mm) |
48% @(1 lp/mm) | |
37% @(2 lp/mm) | |
Mechanica | |
Dimensio (H x W x D) | 171 x 171 x 37 mm |
Pondus | 2.8 Kg |
Sensor Praesidium Material | Carbon Fiber |
habitationi Material | Aluminium Alloy |
Environmental | |
Temperature Range | 10~35°* (operatio);-10~50℃(repono) |
Umor | XXX ~ LXX% RH (non-condensatione) |
Vibratio | IEC/EN 60721-3 classis 2M3(10~150 Hz,0.5 g) |
Offensus | IEC/EN 60721-3 classis 2M3 (11 ms,2 g) |
Pulvis et aqua obsistens | IPX0 |
Potestas | |
Supply | 100~240 VAC |
Frequentia | 50/60 Hz |
Consummatio | 6 W |
Applicationem | |
Industriae | SMT, Electronics, Lithium Battery Chip Wire Bonding Inspectionis |
Mechanica Dimensio | |